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IMAGE SENSOR
CCD area image sensor
S9979
TDI operation / large active area CCD
S9979 is a FFT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. In particular, this image sensor is ideally suited for extremely low-light-level detection in such fields as spectroscopy and astronomy. By operating this image sensor in MPP mode, the dark current can be exceedingly reduced. Moreover, use of the low-noise readout amplifier enables low-light-level detection and long integration time, thus achieving a wide dynamic range. S9979 has an effective pixel size of 48 x 48 m and is available in active area of 73.728 (H) x 6.144 (V) mm.
Features
Applications
l TDI (Time Delay Integration) operation l 1536 (H) x 128 (V) pixel format l Pixel size: 48 x 48 m l 100 % fill factor l Wide dynamic range: 20000 l Low dark signal: 2 ke-/pixel/s Typ. (MPP mode) l Low readout noise: 60 e-rms Typ. l MPP operation
s Specification
Type No. S9979 Cooling Non-cooled
l Industrial inspection l Low-light-level detection
Number of total pixels 1536 x 128
Number of active pixels 1536 x 128
Active area [mm (H) x mm(V)] 73.728 x 6.144
s General ratings
Specification Full frame transfer or TDI 100 % 1536 (H) x 128 (V) 48 (H) x 48 (V) m 73.728 (H) x 6.144 (V) mm 2 phase 2 phase Two-stage MOSFET source follower with load resistance 28-pin ceramic package Quartz window (standard) 1 Window * Temporarily attached window is available *1: Temporary window type (ex. S9979N) and UV coat type (ex. S9979UV) are available upon request. Temporary window is fixed by tape to protect the CCD chip and wire bonding. Parameter CCD structure Fill factor Number of active pixels Pixel size CCD active area Vertical clock phase Horizontal clock phase Output circuit Package
What is TDI operation In FFT-CCD, TDI operation performs continuous imaging of a fast-moving object, by transferring the signals at the same rate as the speed of the moving object. TDI operation allows acquiring continuous, clear images with high S/N and no frame breaks. Since signals of all pixels in each row are accumulated, sensitivity variations can be drastically improved compared to two-dimensional operation.
q Signal integration by TDI operation
SIGNAL TRANSFER * CHARGE CAPACITY OBJECT MOVEMENT
Time1 Time2 Time3 1 line
* * * * *
M line
KMPDC0139EA
1
CCD area image sensor
s Absolute maximum ratings (Ta=25 C)
Parameter Operating temperature Storage temperature OD voltage RD voltage ISV voltage IGV voltage IGH voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage Symbol Topr Tstg VOD VRD VISV VIGV VIGH VSG VOG VRG VTG VP1AV, VP2AV VP1BV, VP2BV VP1AH, VP2AH VP1BH, VP2BH Min. -30 -30 -0.5 -0.5 -0.5 -15 -15 -15 -15 -15 -15 -15 -15 Typ. Max. +30 +70 +20 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15
S9979
Unit C C V V V V V V V V V V V
s Operating conditions (MPP mode, Ta=25 C)
Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage Substrate voltage Vertical input source Test point Vertical input gate Horizontal input gate Vertical shift register clock voltage High Low High Low High Low High Low High Low Symbol VOD VRD VOG VSSA VSSD VISV VIGV VIGH VP1AVH, VP2AVH VP1BVH, VP2BVH VP1AVL, VP2AVL VP1BVL, VP2BVL VP1AHH, VP2AHH VP1BHH, VP2BHH VP1AHL, VP2AHL VP1BHL, VP2BHL VSGH VSGL VRGH VRGL VTGH VTGL Min. 12 12 -0.5 -5 -8 -8 0 -9 0 -9 0 -9 0 -9 0 -9 Typ. 15 13 2 0 0 VRD 0 0 3 -8 3 -8 3 -8 3 -8 3 -8 Max. 14 5 6 V -7 6 V -7 6 -7 6 -7 6 -7 V V V Unit V V V V V V
Horizontal shift register clock voltage Summing gate voltage Reset gate voltage Transfer gate voltage
s Electrical characteristics (Ta=25 C)
Symbol Remark fc frg CP1AV, CP2AV Vertical shift register capacitance CP1BV, CP2BV CP1AH, CP2AH Horizontal shift register capacitance CP1BH, CP2BH Summing gate capacitance CSG Reset gate capacitance CRG Transfer gate capacitance CTG Transfer efficiency CTE *2 DC output level Vout *3 Output impedance Zo *3 Power dissipation P *3, *4 *2: Measured at half of the full well capacity. CTE is defined per pixel. *3: VOD=15 V *4: Power dissipation of the on-chip amplifierParameter Signal output frequency Reset clock frequency Min. 0.99995 5 Typ. 2 2 15000 500 15 10 500 0.99999 8 500 60 Max. 4 4 11 Unit MHz MHz pF pF pF pF pF V mW
2
CCD area image sensor
s Electrical and optical characteristics (Ta=25 C, unless otherwise noted)
S9979
Parameter Symbol Remark Min. Typ. Max. Unit Saturation output voltage Vsat Fw x Sv V Vertical 600 1200 Full well capacity Horizontal Fw 600 1200 keSumming 600 1200 CCD node sensitivity Sv *5 0.45 0.6 V/e6 Dark current (MPP mode) DS * 2 8 ke-/pixel/s 7 Readout noise Nr * 60 120 e-rms 8 Dynamic range DR * 5000 20000 Photo response non-uniformity PRNU *9 3 10 % Spectral response range 400 to 1100 nm White spots 0 Point defects *10 Black spots 0 Blemish Cluster defects *11 0 12 Column defects * 0 *5: VOD=15 V. *6: Dark current doubles for every 5 to 7 C. *7: -40 C, operating frequency is 2 MHz. *8: Dynamic range = Full well capacity / Readout noise *9: Measured at the half of the full well capacity PRNU (%) = Noise / Signal x 100 Noise: Fixed pattern noise (peak to peak) *10: White spots > 20 times of Max. dark signal (8 ke-/pixel/s). Black spots Pixels whose sensitivity is lower than one-half of the average pixel output (Measured with uniform light producing one-half of the saturation charge) *11: 2 to 9 contiguous defective pixels. *12: 10 or more contiguous defective pixels.
s Spectral response (without window)
50 (Typ. Ta=25 C)
QUANTUM EFFICIENCY (%)
40
30
20 UV COAT 10
0 200 300 400 500 600 700 800 900 1000 1100 1200
WAVELENGTH (nm)
KMPDB0244EB
3
CCD area image sensor
s Device structure
ISV IGV P1BV P2BV P1AV P2AV TG RG RD SSA OS OD OG SG 15 23 24 25 26 27 28 1 2 3 4 5 6 7 8 P2AH 9 P1AH 11 SSD 12 13 14 P2BH P1BH IGH S1 S2 S3 S4 S5 S6 ...... 1 2 3 4 ...... 125 126127 128 2 3 4 5 6
S9979
S1, ... , S1536: ACTIVE AREA
KMPDC0234EA
s Pixel format
Blank 0 Optical black 0 Left Horizontal Direction Effective 1536 Right Optical black 0 Blank 0 Isolation 0 Isolation 0
Top Vertical direction Bottom Isolation Effective Isolation 0 128 0
s Timing chart (TDI operation)
Tpwv P1AV, P1BV P2AV, P2BV TG P1AH, P1BH
P2AH, P2BH SG RG OS ENLARGED VIEW Tovr TG P1AH, P1BH Tpwh, Tpws
P2AH, P2BH SG RG OS S1 S2 S3 S4 S5 S1535 S1536
KMPDC0142EB
Tpwr
4
S1531 S1532 S1533 S1534 S1535 S1536
1531 1532 1533 1534 1535 1536
......
CCD area image sensor
s Timing chart (TDI operation, 2 x 2 pixel binning)
Tpwv P1AV, P1BV P2AV, P2BV TG P1AH, P1BH
S9979
P2AH, P2BH SG RG OS ENLARGED VIEW Tovr TG P1AH, P1BH Tpwh, Tpws
P2AH, P2BH SG RG OS S1 + S2 S3 + S4 S1535 + S1536
KMPDC0111EC
Tpwr
Parameter Symbol Pulse width tpwv Rise and fall time tprv, tpfv Pulse width tpwh P1AH, P1BH, Rise and fall time tprh, tpfh P2AH, P2BH Duty ratio Pulse width tpws SG Rise and fall time tprs, tpfs Duty ratio Pulse width tpwr RG Rise and fall time tprr, tpfr TG-P1AH, P1BH Overlap time tovr *13: TG terminal can be short-circuited to P2AV terminal. *14: The clock pulses should be overlapped at 50 % of clock pulse amplitude. P1AV, P1BV, P2AV, P2BV, TG
Remark *13, *14 *14
Min. 30 200 125 10 125 10 10 5 10
Typ. 60 250 50 250 50 50 20
Max. -
Unit s ns ns ns % ns ns % ns ns s
5
CCD area image sensor
s Dimensional outline (unit: mm)
87.0 28 27 16 15 0.5 QUARTZ WINDOW 1.3
0.25
S9979
2.5
PIN No. 1 2 INDEX MARK
13 14 PHOTOSENSITIVE SURFACE
2.54 33.02
0.46
KMPDA0203EA
s Pin connections
Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 to 22 23 24 25 26 27 28 Symbol RG RD SSA OS OD OG SG P2AH P1AH NC SSD P2BH P1BH IGH ISV NC IGV P1BV P2BV P1AV P2AV TG Description Reset gate Reset drain Analog ground Output transistor source Output transistor drain Output gate Summing gate CCD horizontal register clock A-2 CCD horizontal register clock A-1 Digital ground CCD horizontal register clock B-2 CCD horizontal register clock B-1 Test point (Horizontal input gate) Test point (Vertical input source) Test point (Vertical input gate) CCD vertical register clock B-1 CCD vertical register clock B-2 CCD vertical register clock A-1 CCD vertical register clock A-2 Transfer gate Remark
15.24
15.0
Same timing as P2AH Same timing as P1AH Shorted to RD
Same timing as P1AV Same timing as P2AV
s Precautions for use (Electrostatic countermeasures)
q Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. q Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. q Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. q Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs.
s Element cooling/heating temperature incline rate
When cooling the CCD by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of temperature change) for cooling or allowing the CCD to warm back is less than 5 K/minute.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Cat. No. KMPD1091E03 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Feb. 2007 DN
6

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